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resonantswitchingseries reverseconductingigbtwithmonolithicbodydiode IHW40N120R3 datasheet industrialpowercontrol
2 IHW40N120R3 resonantswitchingseries rev.2.2,2015-01-26 reverseconductingigbtwithmonolithicbodydiode features: ?powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly ?trenchstop tm technologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowv cesat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinv cesat ?lowemi ?qualifiedaccordingtojesd-022fortargetapplications ?pb-freeleadplating;rohscompliant ?halogenfree(accordingtoiec61249-2-21) ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?inductivecooking ?inverterizedmicrowaveovens ?resonantconverters ?softswitchingapplications packagepindefinition: ?pin1-gate ?pin2&backside-collector ?pin3-emitter keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IHW40N120R3 1200v 40a 1.55v 175c h40r1203 pg-to247-3 g c e g c e
3 IHW40N120R3 resonantswitchingseries rev.2.2,2015-01-26 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 g c e g c e
4 IHW40N120R3 resonantswitchingseries rev.2.2,2015-01-26 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emitter voltage v ce 1200 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 80.0 40.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 120.0 a turnoffsafeoperatingarea v ce 1200v, t vj 175c - 120.0 a diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 80.0 40.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 120.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s,d<0.010) v ge 20 25 v powerdissipation t c =25c powerdissipation t c =100c p tot 429.0 215.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+175 c soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.35 k/w diode thermal resistance, junction - case r th(j-c) 0.35 k/w thermal resistance junction - ambient r th(j-a) 40 k/w g c e g c e
5 IHW40N120R3 resonantswitchingseries rev.2.2,2015-01-26 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.20ma 1200 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =40.0a t vj =25c t vj =125c t vj =175c - - - 1.55 1.80 1.90 1.75 - - v diode forward voltage v f v ge =0v, i f =40.0a t vj =25c t vj =125c t vj =175c - - - 1.60 1.70 1.80 1.80 - - v gate-emitter threshold voltage v ge(th) i c =1.00ma, v ce = v ge 5.1 5.8 6.4 v zero gate voltage collector current i ces v ce =1200v, v ge =0v t vj =25c t vj =175c - - - - 100.0 2500.0 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =40.0a - 35.3 - s integrated gate resistor r g none w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 2708 - output capacitance c oes - 87 - reverse transfer capacitance c res - 76 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =960v, i c =40.0a, v ge =15v - 335.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-off delay time t d(off) - 336 - ns fall time t f - 38 - ns turn-off energy e off - 2.02 - mj t vj =25c, v cc =600v, i c =40.0a, v ge =0.0/15.0v, r g(on) =7.5 w , r g(off) =7.5 w , l s =220nh, c s =40pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. turn-off energy, soft switching e off dv/dt =150.0v/s - 0.48 - mj g c e g c e
6 IHW40N120R3 resonantswitchingseries rev.2.2,2015-01-26 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-off delay time t d(off) - 410 - ns fall time t f - 96 - ns turn-off energy e off - 3.93 - mj t vj =175c, v cc =600v, i c =40.0a, v ge =0.0/15.0v, r g(on) =7.5 w , r g(off) =7.5 w , l s =220nh, c s =40pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. turn-off energy, soft switching e off dv/dt =150.0v/s - 0.78 - mj g c e g c e
7 IHW40N120R3 resonantswitchingseries rev.2.2,2015-01-26 figure 1. forwardbiassafeoperatingarea ( d =0, t c =25c, t vj 175c; v ge =15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 t p =1s 5s 10s 50s 1ms 10ms dc figure 2. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 400 450 figure 3. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 figure 4. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 60 70 80 90 100 110 120 v ge =20v 17v 15v 13v 11v 9v 7v 5v g c e g c e
8 IHW40N120R3 resonantswitchingseries rev.2.2,2015-01-26 figure 5. typicaloutputcharacteristic ( t vj =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 60 70 80 90 100 110 120 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 6. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 4 5 6 7 8 9 10 11 12 0 10 20 30 40 50 60 70 80 90 100 110 120 t j =25c t j =175c figure 7. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 i c =20a i c =40a i c =80a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =175c, v ce =600v, v ge =0/15v, r g(on) =7.5 w , r g(off) =7.5 w , dynamic test circuit in figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 10 20 30 40 50 60 10 100 1000 t d(off) t f g c e g c e
9 IHW40N120R3 resonantswitchingseries rev.2.2,2015-01-26 figure 9. typicalswitchingtimesasafunctionofgate resistance (inductiveload, t vj =175c, v ce =600v, v ge =0/15v, i c =40a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] t ,switchingtimes[ns] 0 10 20 30 40 50 10 100 1000 t d(off) t f figure 10. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =600v, v ge =0/15v, i c =40a, r g(on) =7.5 w , r g(off) =7.5 w ,dynamic test circuit in figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 10 100 1000 t d(off) t f figure 11. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =1ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 175 2 3 4 5 6 7 8 typ. min. max. figure 12. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =175c, v ce =600v, v ge =0/15v, r g(on) =7.5 w , r g(off) =7.5 w , dynamic test circuit in figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 e off g c e g c e
10 IHW40N120R3 resonantswitchingseries rev.2.2,2015-01-26 figure 13. typicalswitchingenergylossesasa functionofgateresistance (inductiveload, t vj =175c, v ce =600v, v ge =0/15v, i c =40a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] e ,switchingenergylosses[mj] 0 10 20 30 40 50 2 3 4 5 6 e off figure 14. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =600v, v ge =0/15v, i c =40a, r g(on) =7.5 w , r g(off) =7.5 w ,dynamic test circuit in figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e off figure 15. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =175c, v ge =0/15v, i c =40a, r g(on) =7.5 w , r g(off) =7.5 w ,dynamic test circuit in figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 400 500 600 700 800 900 1000 1100 1200 0 1 2 3 4 5 6 7 e off figure 16. typicalturnoffswitchingenergylossfor softswitching (inductiveload, t vj =175c, v ge =0/15v, i c =40a, r g =7,5 w ,dynamictestcircuitin figure e) dv/dt ,voltageslope[v/s] e ,switchingenergylosses[mj] 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t j =c t j =c g c e g c e
11 IHW40N120R3 resonantswitchingseries rev.2.2,2015-01-26 figure 17. typicalgatecharge ( i c =40a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 50 100 150 200 250 300 350 400 0 2 4 6 8 10 12 14 16 240v 960v figure 18. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 10 100 1000 1e+4 c ies c oes c res figure 19. igbttransientthermalresistance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.060632 2.9e-4 2 0.080405 2.2e-3 3 0.18889 0.01389068 4 0.015093 0.1188353 5 2.0e-3 1.860864 figure 20. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.060632 2.9e-4 2 0.080405 2.2e-3 3 0.18889 0.01389068 4 0.015093 0.1188353 5 2.0e-3 1.860864 g c e g c e
12 IHW40N120R3 resonantswitchingseries rev.2.2,2015-01-26 figure 21. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 70 80 t j =25c t j =175c figure 22. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 0 25 50 75 100 125 150 175 0.5 1.0 1.5 2.0 2.5 3.0 i f =20a i f =40a i f =80a g c e g c e
13 IHW40N120R3 resonantswitchingseries rev.2.2,2015-01-26 g c e g c e pg-to247-3
14 IHW40N120R3 resonantswitchingseries rev.2.2,2015-01-26 g c e g c e pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce
15 IHW40N120R3 resonant switching series rev. 2.2, 2015-01-26 revision history IHW40N120R3 previous revision revision date subjects (major changes since last revision) 2.1 2012-10-12 final data sheet 2.2 2015-01-26 minor changes g c e g c e pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce

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